半导体与先进封装 · 全部实体（第 4 / 100 页）

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• Fitting considerations of polynomial device models [semiconductor device modeling]
  crossref T. Rahkonen, A. Heiskanen 2003-11-04T18:56:54Z 置信度 0.61
• Metal-ferroelectric-semiconductor (MFS) FET's using LiNbO/sub 3//Si
  crossref Kwang-Ho Kim 2002-08-24T14:46:34Z 置信度 0.61
• The 23rd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 11)
  crossref 2010-08-24T18:55:00Z 置信度 0.61
• The 23rd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 11)
  crossref 2010-07-27T18:51:14Z 置信度 0.61
• The accumulation channel driven bipolar transistor (ACBT): a new MOS-gated semiconductor power device
  crossref N. Thapar, B.J. Baliga 2002-11-22T21:42:57Z 置信度 0.61
• The 23rd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 11)
  crossref 2010-09-29T18:01:18Z 置信度 0.61
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2023-01-27T18:31:23Z 置信度 0.64
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2022-11-29T19:09:57Z 置信度 0.64
• Evolution of nanophotonics from semiconductor photonic crystal device to metal/semiconductor plasmonic device
  crossref K. Asakawa, Y. Sugimoto, N. Ikeda, D. Tsuya 等 2010-11-19T16:32:06Z 置信度 0.61
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2023-05-23T18:43:05Z 置信度 0.64
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2022-12-28T18:43:40Z 置信度 0.64
• Plasma etching of silicon for semiconductor device fabrication
  crossref 2008-12-09T14:00:08Z 置信度 0.61
• Organic semiconductor strain sensors
  crossref Soyoun Jung, T. Jackson 2005-12-13T20:55:52Z 置信度 0.58
• Optical Properties of Active Semiconductor Waveguides For Integrated Photonics Device Modeling
  crossref Valery I. Tolstikhin 2014-10-14T17:54:28Z 置信度 0.63
• Noise in metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs
  crossref R.T. Webster, A.F.M. Anwar 2004-07-08T20:05:44Z 置信度 0.55
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2023-04-26T18:46:12Z 置信度 0.64
• Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design"
  crossref 2023-03-24T18:29:28Z 置信度 0.64
• High performance semiconductor device simulation on shared memory parallel computers
  crossref M. Hahad, P. Hopper 2005-08-29T08:47:11Z 置信度 0.61
• Reliability Limitations of Metal Electrodes on GaAs
  crossref H. L. Hartnagel 2012-07-28T20:04:34Z 置信度 0.56
• Ruthenium-Assisted Chemical Etching of Silicon: Enabling CMOS-Compatible 3D Semiconductor Device Nanofabrication
  crossref 2020-12-22T00:45:30Z 置信度 0.64
• CMOS Device Reliability for Emerging Cryogenic Space Electronics Applications
  crossref Tianbing Chen, L. Najafizadeh, Chendong Zhu, A. Ahmed 等 2006-03-10T11:50:57Z 置信度 0.58
• Purging: A reliability assurance technique for new technology semiconductor devices
  crossref E.I. Gordon, F.R. Nash, R.L. Hartman 2008-01-12T00:52:49Z 置信度 0.61
• 4H-SiC SIT device for RF heating applications
  crossref S. Ortolland 2006-07-21T21:28:34Z 置信度 0.58
• Noise and fluctuations
  crossref A F J Levi 2018-07-19T02:59:57Z 置信度 0.56
• Manipulation of ferromagnetism in magnetic semiconductor field effect transistors
  crossref H. Ohno 2003-06-25T22:14:31Z 置信度 0.61
• Slope efficiency versus cavity length in quantum dot lasers
  crossref L.V. Asryan 2006-03-10T11:50:57Z 置信度 0.55
• Neutral beam technology for future nano-device
  crossref Seiji Samukawa 2017-05-16T19:39:14Z 置信度 0.60
• Full 3D Process and Device Simulation for FinFET optimization
  crossref M. Nawaz, P. Haibach, E. Landgraf, W. Rosner 等 2006-03-10T11:50:57Z 置信度 0.61
• Advanced semiconductor on insulator substrates for LP and HP digital CMOS applications
  crossref Bich-Yen Nguyen, George Celler, Ian Cayrefourcq, Paul Patruno 等 2008-01-11T20:07:19Z 置信度 0.61
• Semiconductor Material and Device Characterization via Scanning Microwave Microscopy
  crossref Hassan Tanbakuchi, Ferry Kienberger, Matt Richter, Michael Dieudonne 等 2013-11-21T15:52:07Z 置信度 0.63
• Energy band diagram of metal-oxide-semiconductor capacitor with HfLaTaO/HfSiO stacked high-k dielectric
  crossref Chin-Lung Cheng, Kuei-Shu Chang-Liao 2012-01-30T16:47:17Z 置信度 0.63
• The ultimate MOSFET and the limits of miniaturization
  crossref Mark Lundstrom 2008-01-11T20:07:19Z 置信度 0.58
• High Speed IC Reliability : Concerns and Advances
  crossref A. A. Iliadis 2012-07-29T00:04:34Z 置信度 0.60
• Charge‐Based and Probe Characterization
  crossref 2006-11-02T11:48:26Z 置信度 0.55
• Increased transconductance MOSFET device
  crossref Alin Voicu-Spineanu, Dragos Dobrescu, Lidia Dobrescu 2016-12-19T22:08:11Z 置信度 0.63
• Introduction
  crossref Peter A. Markowich 2013-01-05T11:29:38Z 置信度 0.56
• An Adaptive Linearization Method for a Constraint Satisfaction Problem in Semiconductor Device Design Optimization
  The device optimization is a very important element in semiconductor technology advancement. Its objective is to find a design point for a semiconductor device so that the optimized design goal meets all specified constraints. As in other engineering fields, a…
  crossref Chih-Hui Chang 2026-04-12T05:19:22Z 置信度 0.82 computer and information sciencescs.lgeess.sycs.aimath.oc
• Technology Computer Aided Design
  crossref Peter A. Blakey 2018-12-16T04:37:31Z 置信度 0.56
• 5 Metal–Oxide–Semiconductor Field-Effect Transistors
  crossref 2020-11-26T11:35:51Z 置信度 0.64
• Ge/Si hetero-nanocrystal MOSFET memories
  crossref Jianlin Liu, Bei Li 2008-01-12T01:07:19Z 置信度 0.58
• Characterization of Polysilicon-Oxide-Nitride-Oxide-Silicon (SONOS) Nonvolatile Semiconductor Memory (NVSM) Devices
  crossref Xiaonan Steven Wang, Yu Wang, M.J. Chabalko, M.H. White 等 2006-03-10T11:50:57Z 置信度 0.61
• The experiments of device implant process on threshold mismatch for advanced CMOS technology
  crossref S. M. Wang, S. J. Chang, C. Y. Hu 2010-01-20T19:20:17Z 置信度 0.61
• Pseudo arc-length continuation method for multiple solutions in one-dimensional steady state semiconductor device simulation
  crossref Tai-Yih Tso 2018-08-13T15:01:30Z 置信度 0.63
• Resin composition for sealing and semiconductor device
  crossref 2016-09-08T21:40:21Z 置信度 0.63
• Impurity Band Conductivity
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.57
• Appendix 2: Abbreviations and Acronyms
  crossref 2006-11-02T11:48:26Z 置信度 0.55
• Photonic bandgap based designs for nano-photonic integrated circuits
  crossref E. Yablonovitch 2004-07-08T20:05:44Z 置信度 0.58
• Reliability concerns in contemporary SiC power devices
  crossref R. Singh, A.R. Hefner, T.R. McNutt 2004-07-08T20:05:44Z 置信度 0.61
• Semiconductor device life and system removal rates
  crossref 2003-03-15T06:33:09Z 置信度 0.61
• Transit Time Microwave Devices
  crossref Robert J. Trew 2018-12-16T09:37:31Z 置信度 0.60
• Thermal resistance of the semiconductor structures for a photomixing device
  crossref J. Darmo, F. Schafer, A. Forster, P. Kordos 等 2003-08-27T11:01:47Z 置信度 0.61
• The Application of Sparse Supernodal Factorization Algorithms for Structurally Symmetric Linear Systems in Semiconductor Device Simulation
  crossref A. Liegmann, W. Fichtner 2011-09-16T01:27:02Z 置信度 0.63
• Field-Effect Transistors
  crossref Vitalii K. Dugaev, Vladimir I. Litvinov 2021-09-27T13:29:14Z 置信度 0.61
• Schottky Diode Frequency Multipliers
  crossref Jack East 2010-02-23T15:02:18Z 置信度 0.55
• 4409672 Dynamic semiconductor memory device
  crossref Yoshihir Takemae 2003-03-15T06:06:46Z 置信度 0.61
• Application of Modelling to Microwave CAD
  crossref D. Michael Brookbanks 2011-12-11T04:54:12Z 置信度 0.56
• Photoconductive Diodes
  crossref J. S. Yuan, J. J. Liou 2013-06-24T05:13:56Z 置信度 0.56
• Simulations shed light on key process in semiconductor device manufacturing
  Classical molecular dynamics reveal intricacies of silicon atomic layer etching process with alternating exposure to chlorine gas and argon ions
  crossref Ben Ikenson 2022-02-10T13:33:01Z 置信度 0.72
• Impact of Nanoelectronics in the Semiconductor Field
  crossref G. Boopathi Raja 2022-02-25T21:04:11Z 置信度 0.61
• Resin composition for sealing a semiconductor device
  crossref 2023-03-03T19:16:51Z 置信度 0.64
• New semiconductor device achieves high amplification
  crossref 2013-05-17T21:06:11Z 置信度 0.63
• Contact Resistance and Schottky Barriers
  crossref 2006-11-02T11:48:26Z 置信度 0.55
• Thermal simulation for SOI devices combining a thermal circuit model with device simulation
  crossref R. Wettimuny, M.-C. Cheng 2002-11-13T23:37:42Z 置信度 0.61
• Modification of semiconductor device characteristics by lasers
  crossref 2007-01-18T12:18:54Z 置信度 0.61
• Scanning Probe Microscopy for Nanoscale Semiconductor Device Analysis
  crossref Phil Kaszuba 2019-10-11T09:46:51Z 置信度 0.64
• Mechanical standardization of semiconductor devices
  crossref 2015-06-09T20:10:57Z 置信度 0.63
• New two-dimensional dopant delineation techniques for sub-micron device characterization
  crossref Corrado Spinella 2002-07-25T08:55:28Z 置信度 0.58
• Semiconductor device sensitive to magnetic field gradient
  crossref 2008-01-26T12:48:37Z 置信度 0.61
• Principles of Semiconductor Device Operation
  crossref 2010-07-02T19:41:32Z 置信度 0.61
• Heavy Ion Induced Upsets in Semiconductor Devices
  Heavy ions produced at various accelerator facilities have been employed to measure the effect of cosmic rays on semiconductor devices in space. An ion transmission counter, a solid state detector, and a position sensitive detector comprise the beam-monitor sy…
  openalex R. Koga, W. A. Kolasinski, S. S. Imamoto 1985-01-01 置信度 0.78 UpsetDetectorSemiconductor deviceSemiconductor detectorSemiconductor
• Mixed finite volume methods for semiconductor device simulation
  We deal with the two-dimensional numerical solution of the Van Roosbroeck system, widely employed in modern semiconductor device simulation. Using the well-known Gummel's decoupled algorithm leads to the iterative solution of a nonlinear Poisson equation for t…
  openalex Riccardo Sacco, Fausto Saleri 1997-05-01 置信度 0.78 MathematicsFinite volume methodVolume (thermodynamics)SemiconductorApplied mathematics
• Current transport models for nanoscale semiconductor devices
  openalex Viktor Sverdlov, E. Ungersboeck, Hans Kosina, S. Selberherr 2007-12-10 置信度 0.67 Boltzmann equationStatistical physicsMonte Carlo methodScalingPhysics
• Neural-Based Models of Semiconductor Devices for SPICE Simulator
  The paper addresses a simple and fast new approach to implement Artificial Neural Networks (ANN) models for the MOS transistor into SPICE. The proposed approach involves two steps, the modeling phase of the device by NN providing its input/output patterns, and…
  openalex Hanene Ben Hammouda, Mongia Mhiri, Zià ̈d Gafsi, Kamel Besbes 2008-04-01 置信度 0.78 SpiceSimulationComputer scienceElectronic circuit simulationSemiconductor device
• Infrared Light Emission From Semiconductor Devices
  Abstract We present results using near-infrared (NIR) cameras to study emission. characteristics of common defect classes for integrated circuits (ICs). The cameras are based on a liquid nitrogen cooled HgCdTe imaging array with high quantum efficiency and ver…
  openalex Daniel L. Barton, Paiboon Tangyunyong, J.M. Soden, A.Y. Liang 等 1996-08-01 置信度 0.78 Near-infrared spectroscopyQuantum efficiencyInfraredOptoelectronicsWavelength
• Generalized Einstein relation for disordered semiconductors—implications for device performance
  The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of qu…
  openalex Yohai Roichman, Nir Tessler 2002-03-18 置信度 0.78 Einstein relationOrganic semiconductorMaterials scienceExcitonDiffusion
• Two-dimensional semiconductors for transistors
  openalex Manish Chhowalla, Debdeep Jena, Hua Zhang 2016-08-17 置信度 0.69 PhosphoreneSiliceneMaterials scienceSemiconductorTransistor
• Liquid‐Crystalline Ordering as a Concept in Materials Science: From Semiconductors to Stimuli‐Responsive Devices
  While the unique optical properties of liquid crystals (LCs) are already well exploited for flat-panel displays, their intrinsic ability to self-organize into ordered mesophases, which are intermediate states between crystal and liquid, gives rise to a broad v…
  openalex Eva‐Kristina Fleischmann, Rudolf Zentel 2013-07-23 置信度 0.80 Liquid crystalLiquid crystallineMaterials sciencePolymerNanotechnology
• Mixed‐RKDG Finite Element Methodsfor the 2‐D Hydrodynamic Modelfor Semiconductor Device Simulation
  In this paper we introduce a new method for numerically solving the equations of the hydrodynamic model for semiconductor devices in two space dimensions. The method combines a standard mixed finite element method, used to obtain directly an approximation to t…
  openalex Zhangxin Chen, Bernardo Cockburn, Joseph W. Jerome, Chi‐Wang Shu 1995-01-01 置信度 0.78 Discontinuous Galerkin methodFinite element methodConservation lawApplied mathematicsField (mathematics)
• Investigation of non‐local transport phenomena in small semiconductor devices
  Abstract The hydrodynamic transport model based fin the generalized momentum and energy equations is used to simulate a n + ‐n‐n + one‐dimensional silicon device and the results are compared with Monte Carlo calculations. The non‐local effects are shown to bec…
  openalex A. Gnudi, Farouk Odeh, M. Rudan 1990-05-01 置信度 0.78 Monte Carlo methodMomentum (technical analysis)SiliconThermal conductivityMechanics
• Automatic Generation of Compact Electro-Thermal Models for Semiconductor Devices
  Introduction modeling ofelectro-thWOzs processes becomes increasingly important during semiconductor device development. For example, with th decreasing size and growing complexity of micro-electronic and micro-electro-mech)D) (MEMS) systems,th power dissipati…
  openalex Tamara Bechtold, Evgenii B. Rudnyi, Jan G. Korvink 2003-03-01 置信度 0.72 SemiconductorSemiconductor deviceThermalMaterials scienceEngineering physics
• Delta doping of III–V compound semiconductors: Fundamentals and device applications
  Delta-function-like doping profiles can be obtained in semiconductors by growth-interrupted impurity deposition during molecular-beam epitaxy. The spatial localization of dopants is assessed by the capacitance–voltage profiling technique and secondary ion mass…
  openalex E. F. Schubert 1990-05-01 置信度 0.78 DopantMaterials scienceDopingMolecular beam epitaxyCondensed matter physics
• Upwind Finite Difference Solution of Boltzmann Equation Applied to Electron Transport in Semiconductor Devices
  openalex Emad Fatemi, Faroukh Odeh 1993-10-01 置信度 0.67 Boltzmann equationPoisson's equationConvection–diffusion equationPhysicsPoisson–Boltzmann equation
• Hydrogen-Treated Stable IGZO Thin-Film Transistor with All-Sputtered Gate Stack
  crossref Taewon Seo, Juyoung Yun, Suwon Seong, Hyuk Park 等 2021-04-23T22:40:30Z 置信度 0.64
• Design and Performance Analysis of Single Material and Triple Material Cylindrical Gate All Around Gate Stack Silicon Nanowire FET at 7 nm Technology node
  crossref Shankhamitra Sunani, Satya Sopan Mahato, Raghunandan Swain 2025-12-02T18:44:54Z 置信度 0.66
• System-level optimization and benchmarking for InAs nanowire based gate-all-around tunneling FETs
  crossref Chenyun Pan, A. Ceyhan, A. Naeemi 2013-06-13T20:54:03Z 置信度 0.63
• <i>(Invited) </i>Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization
  crossref Anne-Claire Salaun, Brice Le Borgne, Laurent Pichon 2018-09-21T17:46:53Z 置信度 0.63
• Influence of Gate-Drain Underlap Length on Germanium Gate-All-Around Tunneling Field-Effect-Transistors
  crossref Kai-Xiao Wei, Xiao-Jin Li, Ya-Bin Sun, Yan-Ling Shi 2020-12-22T01:01:05Z 置信度 0.64
• Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate
  Abstract A MOSFET formed by a Si cantilever channel suspended between source/drain “anchors” wrapped all-around by high-κ dielectric and metal gate is demonstrated. The device shows excellent subthreshold characteristics and low leakage currents due to the ful…
  crossref Sagnik Dey, Se-Hoon Lee, Sachin V. Joshi, Prashant Majhi 等 2011-04-05T09:08:33Z 置信度 0.78 materials scienceneuromorphic engineeringoptoelectronicscond-mat.mtrl-scigeology
• Performance breakthrough in 8 nm gate length Gate-All-Around nanowire transistors using metallic nanowire contacts
  crossref Y. Jiang, T. Y. Liow, N. Singh, L.H. Tan 等 2008-08-11T20:22:36Z 置信度 0.61
• Electrothermal Performance Enhancement of Silicon Carbide Gate-All-Around MOSFETs Using a Ferroelectric Gate Stack
  crossref Vincenzo Terracciano, Alessandro Borghese, Marco Boccarossa, Andrea Irace 等 2025-11-03T18:42:30Z 置信度 0.66
• An inner gate as enabler for vertical pitch scaling in macaroni channel gate-all-around 3-D NAND flash memory
  crossref D. Verreck, A. Arreghini, G. Van den bosch, M. Rosmeulen 2022-10-29T21:46:14Z 置信度 0.64
• Impact of Reverse Gate Oxide Stacking on Gate All Around Tunnel FET for High Frequency Analog and RF Applications
  crossref Amit Das, Binod Kumar Kanaujia, Vandana Nath, Sonam Rewari 等 2021-02-09T01:24:44Z 置信度 0.64
• Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire
  A gate-all-around polycrystalline silicon nanowire (NW) floating-gate (FG) memory device was fabricated and characterized in this work. The cross-section of the NW channels was intentionally made to be triangular in shape in order to study the effects of the c…
  crossref Ko-Hui Lee, Jung-Ruey Tsai, Ruey-Dar Chang, Horng-Chih Lin 等 2013-10-11T15:16:38Z 置信度 0.78 chondritecond-mat.mes-hallsemiconductorplasmainformation theory
• Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF Performance
  crossref Rajni Gautam, Manoj Saxena, Radhey Shyam Gupta, Mridula Gupta 2013-04-29T18:04:39Z 置信度 0.63
• Gate-Induced Drain Leakage Reduction in Cylindrical Dual-Metal Hetero-Dielectric Gate All Around MOSFET
  crossref Sonam Rewari, Vandana Nath, Subhasis Haldar, S. S. Deswal 等 2017-12-04T19:18:36Z 置信度 0.63
• Nanoscale Trench Gate Engineered JAM Gate-All-Around (TGE-JAM-GAA) Label-Free BioFET for Charged/Neutral Biomolecules Detection
  crossref Shivani Yadav, Sonam Rewari 2024-08-29T10:11:40Z 置信度 0.66
• Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
  A novel gate-all-around (GAA) poly-Si floating-gate (FG) memory device with triangular nanowire (NW) channels was fabricated and characterized in this work. The enhanced electric field around the corners of the NW channels boosts more electrons tunneling throu…
  crossref Jung-Ruey Tsai, Ko-Hui Lee, Horng-Chih Lin, Tiao-Yuan Huang 2014-03-24T11:31:08Z 置信度 0.78 physics.plasm-phpetroleum engineeringgraphenemechanical engineeringoptics
• A Degradation Model of Double Gate and Gate-All-Around MOSFETs With Interface Trapped Charges Including Effects of Channel Mobile Charge Carriers
  crossref 2014-03-11T18:02:31Z 置信度 0.63
• Channel Material and Inner Spacer Impact on Gate Stack TDDB of Gate-All-Around Nanosheet Transistors
  crossref Huimei Zhou, Shogo Mochizuki, Xiaoli He, Nicolas Loubet 等 2026-05-07T19:51:08Z 置信度 0.66
• Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-&amp;#x043A;/metal-gate: Effects of hydrogen thermal annealing and nanowire shape
  crossref Pouya Hashemi, James T. Teherani, Judy L. Hoyt 2011-01-28T15:08:33Z 置信度 0.63