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GeneTech 知识引擎共收录 763 篇相关科研实体，横跨 27 个垂直领域。数据来自 OpenAlex、arXiv、Crossref、PubMed、Europe PMC 等公开学术源，全部可溯源到原文。

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代表性文献（按质量分排序，前 60 条）

• Photo-thermoelastic diffusive waves with microconcentration in quantum-modified semiconductors.
  2026 · 量子材料 · This study presents a general one-dimensional analysis of photo-thermoelastic diffusive wave propagation in quantum-modified semiconductor media that incorporates microconcentration effects. The model extends classical p…
• Quantum-modified photo-thermoelastic wave propagation in semiconductors with temperature-dependent thermal conductivity.
  2026 · 量子材料 · A generalized quantum-modified photo-thermoelastic model is developed to investigate wave propagation in semiconductor media subjected to ramp-type laser heating while accounting for temperature-dependent thermal conduct…
• 1.7kV Fully-Vertical GaN Trench MOSFET with Nitrogen Ion-Implanted Guard Rings.
  2026 · 半导体与先进封装 · This work presents a high-performance fully vertical GaN trench MOSFET on GaN substrate, featuring a selective nitrogen ion-implanted guard rings edge termination. The device exhibits a high breakdown voltage of 1715 V, …
• Wide and Ultrawide Bandgap Power Semiconductors: A Comprehensive System-Level Review
  2026 · 半导体与先进封装 · This review analyzes the transition from silicon to wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductor materials for power electronics, focusing on Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies.…
• Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications.
  2026 · 半导体与先进封装 · Scandium-doped aluminum nitride (ScAlN) has emerged as a wide-bandgap ferroelectric material with exceptional potential for next-generation electronic devices due to its tunable polar properties, high breakdown field, an…
• Design and Optimization of AlGaN/GaN Graded Barrier MOS-HEMT Biosensor for Breast Cancer Biomolecule detection.
  2026 · 半导体与先进封装 · In this paper, we have designed and simulated an AlGaN/GaN graded barrier metal oxide semiconductor high electron mobility transistor (MOS-HEMT) heterojunction biosensor for detection of Breast Cancer biomolecules. A gra…
• Wide and Ultrawide Bandgap Power Semiconductors: A Comprehensive System-Level Review
  2026 · 半导体与先进封装 · This review analyzes the transition from silicon to wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductor materials for power electronics, focusing on Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies.…
• Screening of Material Defects using Universal Machine‐Learning Interatomic Potentials
  2025 · AI 驱动科学发现 · Abstract Finding new materials with previously unknown atomic structure or materials with optimal set of properties for a specific application greatly benefits from computational modeling. Recently, such screening has be…
• Surface Modification of Wide Bandgap Semiconductor GaN Using Femtosecond Laser Induced Periodic Surface Structuring LIPSS
  2025 · 半导体与先进封装 · Abstract The constant growth of power electronics field of technologies and applications demands ever growing research to find novel materials with characteristics to stand harsher work conditions and wider range of appl…
• A first-principles study of Hoffmann-type ultra-wide bandgap semiconductor material.
  2025 · 半导体与先进封装 · A novel Hoffmann-type metal-organic framework ultra-wide bandgap semiconductor material, {Ni(DMA) 2 [Ni(CN) 4 ]}(DMA denotes dimethylamine), has been predicted. The material has been named Ni-DMA-Ni, and its structure, s…
• A review of ultra-wide-bandgap semiconductor radiation detector for high-energy particles and photons.
  2025 · 半导体与先进封装 · Abstract Radiation detectors have gained significant attention due to their extensive applications in high-energy physics, medical diagnostics, aerospace, and nuclear radiation protection. Advances in relevant technologi…
• Tunable Thermal Emitters Based on Femtosecond Laser Structured SiC for High Power Chip Heat Dissipation.
  2025 · 半导体与先进封装 · Efficient thermal management based on wide-bandgap semiconductor materials plays a crucial role in enhancing the performance of high power devices aimed at next-generation information technology. Silicon carbide (SiC), a…
• III-V Compound Semiconductor Nanowire Arrays for Sensor Applications─A Review.
  2025 · 半导体与先进封装 · In recent years, semiconductor nanowires have emerged as a promising platform for the development of next-generation sensing devices due to their nanoscale, one-dimensional geometry, high surface-to-volume ratio, and sup…
• High hall mobility carbonized steamed buns-based polymer memristor for neuromorphic computing and image recognition
  2026 · 类脑计算 · Abstract The development of new n-type semiconductors is crucial for the further advancement of electronic and optoelectronic devices. Steamed buns, anciently known as "man tou", mainly made of wheat flour and are one of…
• Design and testing of a high-speed precision hole sowing seed supply device for pelletized rice seed.
  2025 · 智慧农业 · To solve the limitations of mechanical rice hole sowing seed dispensers, which are bulky and difficult to adapt to the complex terrain, and to fill the technical gap of UAV rice precision hole sowing, this paper proposes…
• Unassisted Switchable Dual‐Photoelectrode Devices Utilizing p‐n Carbon Quantum Dots as “Semiconductor Electrolytes”: Optimization Between H 2 O 2 and Solar Electricity Production
  2025 · 碳中和与 CCUS · Abstract Switchable self‐driven photoelectrochemical (PEC) devices are developed to boost H 2 O 2 or electricity generation under visible‐light illumination, in which p‐n type carbon quantum dots (N‐CQDs) is applied as c…
• Optical Absorption in Indirect Semiconductor to Semimetal PtSe 2 Arises from Direct Transitions
  2025 · 碳中和与 CCUS · PtSe_{2} is a van der Waals material transitioning from an indirect band gap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect tran…
• Multiscale simulation and machine learning facilitated design of two-dimensional nanomaterials-based tunnel field-effect transistors: A review
  2025 · 边缘智能 · Traditional transistors based on complementary metal–oxide–semiconductor and metal–oxide–semiconductor field-effect transistors are facing significant limitations as device scaling reaches the limits of Moore’s law. Thes…
• Performance and variability analysis of ALD-grown wafer scale HfO2/Ta2O5-based memristive devices for neuromorphic computing
  2025 · 类脑计算 · Here, we report a large-scale wafer microfabrication process and in-depth electrical analysis of atomic layer deposition (ALD) grown bilayer (i.e., HfO 2 /Ta 2 O 5 ) memristive devices. The fabricated bilayer devices ini…
• Engineering Nonvolatile Polarization in 2D α-In2Se3/α-Ga2Se3 Ferroelectric Junctions
  2025 · 类脑计算 · The advent of two-dimensional (2D) ferroelectrics offers a new paradigm for device miniaturization and multifunctionality. Recently, 2D α-In2Se3 and related III–VI compound ferroelectrics manifest room-temperature ferroe…
• [MGA::NUTM1 fused sarcoma in children: report of a case].
  2025 · 核能 · NUTM1重排肉瘤是一种在分子水平上与NUT癌不同的实体肿瘤，其易位&#x4…
• Quantum-enhanced electric field mapping within semiconductor devices
  2025 · 量子材料 · Semiconductor components based on silicon carbide ( Si C ) are a key component for high-power electronics. Their behavior is determined by the interplay of charges and electric fields, which is typically described by mod…
• Modular Autonomous Virtualization System for Two-Dimensional Semiconductor Quantum Dot Arrays
  2025 · 量子材料 · Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite an…
• Colloidal semiconductor quantum shells for solution-processed laser applications
  2025 · 量子材料 · Laser diodes based on solution-processed semiconductor quantum dots (QDs) present an economical and color-tunable alternative to traditional epitaxial lasers. However, their efficiency is significantly limited by non-rad…
• An upwind-block-centered finite difference method for a semiconductor device of heat conduction and its numerical analysis
  2024 · 半导体与先进封装 · The mathematical model is formulated by a nonlinear system of initial-boundary problem including four partial differential equations: an elliptic equation for electrostatic potential, two convection-diffusion equations f…
• Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects
  2024 · 半导体与先进封装 · Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals,…
• Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives
  2024 · 半导体与先进封装 · Wide-bandgap semiconductors (WBGs) are crucial building blocks of many modern electronic devices. However, there is significant room for improving the crystal quality, available choice of materials/heterostructures, scal…
• Quantum Transport through a Constriction in Nanosheet Gate-all-around Transistor
  2024 · 半导体与先进封装 · Abstract In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation still remains a challengi…
• Remarkably high tensile strength and lattice thermal conductivity in wide band gap oxidized holey graphene C2O nanosheet
  2024 · AI 驱动科学发现 · Recently, the synthesis of oxidized holey graphene with the chemical formula C2O has been reported (J. Am. Chem. Soc. 2024, 146, 4532). We herein employed a combination of density functional theory (DFT) and machine lear…
• An inorganic-blended p-type semiconductor with robust electrical and mechanical properties
  2024 · 类脑计算 · Abstract Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we…
• Tuning the physical properties of inorganic novel perovskite materials Ca3PX3 (X=I, Br and Cl): Density function theory
  2024 · 量子材料 · In photovoltaic technology, inorganic perovskite solar cells formed from halide have developed into a noteworthy prospect, primarily attributable to their exceptional efficiency, cost-effectiveness, and straightforward m…
• 12-Spin-Qubit Arrays Fabricated on a 300 mm Semiconductor Manufacturing Line
  2024 · 量子材料 · Intel's efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure…
• Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives
  2024 · 量子材料 · Wide-bandgap semiconductors (WBGs) are crucial building blocks of many modern electronic devices. However, there is significant room for improving the crystal quality, available choice of materials/heterostructures, scal…
• Materials for excitons–polaritons: Exploiting the diversity of semiconductors
  2024 · 量子材料 · The regime of strong coupling between photons and excitons gives rise to hybrid light–matter particles with fascinating properties and powerful implications for semiconductor quantum technologies. As the properties of ex…
• Ultrastrong Coupling of Si1–xGex Parabolic Quantum Wells to Terahertz Microcavities
  2024 · 量子材料 · Control and manipulation of quantum states by light are increasingly important for both fundamental research and applications. This can be achieved through the strong coupling between light and semiconductor devices, typ…
• Quantum teleportation and remote sensing through semiconductor quantum dots affected by pure dephasing
  2024 · 量子材料 · Quantum teleportation allows the transmission of quantum states over arbitrary distances and is an applied tool in quantum computation and communication. This paper theoretically addresses the feasibility of quantum tele…
• Principles of semiconductor devices
  2024 · 半导体与先进封装 · Abstract Describes the operation of many different semiconductor devices, starting with the p-n junction (in equilibrium, forward bias and reverse bias), and shows how similar principles underpin the first important type…
• (Ultra)wide bandgap semiconductor heterostructures for electronics cooling
  2024 · 半导体与先进封装 · The evolution of power and radiofrequency electronics enters a new era with (ultra)wide bandgap semiconductors such as GaN, SiC, and β-Ga2O3, driving significant advancements across various technologies. The elevated bre…
• Covalent Organic Framework‐Semiconductor‐Based Heterostructures for Photocatalytic Applications
  2023 · 碳中和与 CCUS · Abstract Photocatalysis is a promising and sustainable technology in the fields of energy conversion/storage and environment purification; however, the utilization of individual component as photocatalyst is generally re…
• Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices
  2023 · 量子材料 · Van der Waals coupling with different stacking configurations is emerging as a powerful method to tune the optical and electronic properties of atomically thin two-dimensional materials. Here, we investigate 3R-stacked t…
• Wide bandgap semiconductor-based integrated circuits
  2023 · 半导体与先进封装 · Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to traditional semiconductors such as silicon, rendering them very promising for applications in the fields of electronics and optoelectronics…
• Emerging II-VI wide bandgap semiconductor device technologies
  2023 · 半导体与先进封装 · Abstract The demand for advanced electronic and optoelectronic devices has driven significant research and development efforts toward exploring emerging semiconductor materials with enhanced performance characteristics. …
• [Robots and embodied intelligence in endoscopic transnasal surgery: advances, challenges, and future perspectives].
  2025 · 具身智能 · 经鼻内镜手术（endoscopic transnasal surgery，ETS）是治疗鼻窦及颅底疾病的关键微&#x5…
• Geometric Intelligence Implementation Guide for Semiconductor manufacturer, The Fixed Point of Koryo — Koryo Precision Instruments Corporation: A Four-Year Battlefield —
  2026 · 具身智能 · Positioning of This Work This book is a case study resource (in narrative form) designed to explain how to use the Geometric Intelligence theory (Volumes 1 and 2). It is a work of fiction constructed exclusively from rea…
• Fabrication of Thermo Electric Module for Cooling Applications Using Solar Energy
  2026 · 新能源 · Thermo-Electric refrigeration is one of the recent developments in the field of refrigeration. The development of semiconductor technology enhanced the feasibility of Thermo-Electric applications to greater extent. Therm…
• Cold War Secrecy in the Berkshire Landscape: A Rediscovered Royal Observer Corps Underground Monitoring Post at Arborfield Cross
  2026 · 核能 · Preliminary archaeological works carried out in 2016 raised the possibility of subterranean components of a military origin remaining within the area of the proposed works. Subsequent investigation by Wessex Archaeology,…
• Carry-on for Consciousness: An Embodied Travel Writer Trainer
  2025 · 具身智能 · The Carry-on for Consciousness is a hard shell wheeled carry-on luggage bag with embedded electronics to allow for embodied travel writing during the most mundane aspects of a flying vacation. A traveler can wheel the ca…
• Inversion-sensing SiO2-based MOS capacitive synapse for neuromorphic computing
  2025 · 类脑计算 · In this work, an inversion-sensing SiO2-based capacitive synapse device was introduced by using the lateral coupling effect in a concentric metal–oxide–semiconductor structure. The device achieved a CHCS/CLCS ratio of 24…
• Modeling and Free Energy Loss Analysis of Wide Bandgap Semiconductor Schottky Barrier Diodes
  2025 · 半导体与先进封装 · This study evaluates and compares materials for Schottky barrier power diodes by free energy loss analysis (FELA) technique to reveal detailed material characteristics for power electronics applications. Wide band-gap (W…
• Evolution of Transistor Architecture: From FinFET to Gate-All-Around Technology
  2025 · 半导体与先进封装 · The evolution from FinFET to Gate-All-Around (GAA) technology marks a pivotal advancement in semiconductor manufacturing, addressing critical challenges in transistor scaling and power efficiency. This transition represe…
• Optimization and characterization of n- and p-type DSSCs: A road toward feasible tandem DSSCs
  2025 · 半导体与先进封装 · Together, coal, gas, and oil possess the largest footprint of greenhouse gases on this planet. These fossil resources are mainly used to generate heat and electricity. Subsequently, the energy sector has proven hazardous…
• Anti-inflammatory and tissue-healing effects of semiconductor-embedded fabrics: current evidence and future perspectives.
  2026 · 半导体与先进封装 · Wearable fabrics embedding crystalline semiconductor materials (e.g. germanium, silicon) are promising biomedical devices for their therapeutic potential in musculoskeletal disorders, including osteoarthritis, tendinopat…
• Novel Neuromorphic Functions of GaN-Nanowire-Based Optoelectronic Synapses in Photoelectrochemical Environment
  2025 · 类脑计算 · We construct a photoelectrochemical synaptic device using p-AlGaN/n-GaN nanowires that integrates chemical-electric behaviors into optoelectronic synapses. The device demonstrates dual-modal plasticity, mimics chemically…
• Mathematical model and a block-centered difference approximation for a semiconductor device problem with heat and magnetic influences *
  2022 · 半导体与先进封装 · Abstract In this paper, we present a mathematical model with initial-boundary values and a block-centered approximation for a new semiconductor device type. Two factors, heat and magnetic influences are considered. This …
• Super-Resolution Optical Microscopy for Investigations of Defects in Semiconductor Device
  2021 · 半导体与先进封装 · Abstract Ripples scattering of sidewall in pattern devices is efficient and necessary for monitoring the semiconductor fabrication process. As a step towards improving the imaging quality in terms of scattering, an attem…
• A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-gate MOSFETS
  2024 · 半导体与先进封装 · Based on the minimum conduction band edge caused by the minimum channel potential resulting from the quasi-3D scaling theory and the 3D density of state (DOS) accompanied by the Fermi-Dirac distribution function on the s…
• Artificial Intelligence Technique of Synthesis and Characterizations for Measurement of Optical Particles in Medical Devices
  2022 · 医疗人工智能 · The aim of this study is to demonstrate the effect of particle size on semiconductor properties; artificial intelligence is being used for the research methods. As a result, we picked cadmium sulfide (CdS), which is a un…
• Magnetic tunnel junction based implementation of spike time dependent plasticity learning for pattern recognition
  2022 · 类脑计算 · Abstract We present a magnetic tunnel junction (MTJ) based implementation of the spike time-dependent (STDP) learning for pattern recognition applications. The proposed hybrid scheme utilizes the spin–orbit torque (SOT) …
• Through the Lens of a Momentum Microscope: Viewing Light‐Induced Quantum Phenomena in 2D Materials
  2022 · 量子材料 · Van der Waals (vdW) materials at their 2D limit are diverse, flexible, and unique laboratories to study fundamental quantum phenomena and their future applications. Their novel properties rely on their pronounced Coulomb…
• Power Envelope Analysis for the Thermal Optimization of a Chiplet Module
  2022 · 半导体与先进封装 · Abstract In this paper, the thermal performances of a Chiplet module with different numbers of dies were studied. The Chiplet module was assumed to be placed in the same server system, with the same ambient condition, an…

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